03.08.2010 rlt635_ser ies_cmount_to3.doc 1 of 4 rlt635- series , c-mount / to-3 technical data 635nm high power laser diode specifications (25c) rlt635-150-x rlt635-300-x RLT635-500-X type min. typ. max. min. typ. max. min. typ, max. unit optical specification cw output power p o - 150 - - 300 - - 500 - w center wavelength c 630 635 642 630 635 642 630 635 642 nm spectral width ? - 1 2.5 - 1 2.5 - 1 2.5 nm emitting area - 100x1 - - 100x1 - - 150x1 - m wavelength temperature coefficient - 0.25 - - 0.25 - - 0.25 - nm/c beam divergence U - - 40x10 - - 40x10 - - 40x10 deg polarization tm tm tm electrical specification slope efficiency e s 0.80 0.90 - 0.80 0.90 - 0.8 0.95 - w/a threshold current i th - 400 450 - 550 620 - 750 850 ma operation current i o - 600 650 - 850 1000 - 1250 1350 ma operation voltage v f - 2.1 2.3 - 2.1 2.3 - 2.1 2.3 v series resistance r d - - - - - - - ? package style to3 / c-mount to3 / c-mount absolute maximum ratings operating temperature t o 10 ? 25 10 ? 25 10 ? 25 c storage temperature t stg -40 ? 85 - 40 ? 85 - 40 ? 85 c features ? cw output power: 150 mw, 300 mw, 500 mw ? high reliability ? high efficiency ? to package or c-mount applications ? medical usage ? pointer ? laser display
03.08.2010 rlt635_ser ies_cmount_to3.doc 2 of 4 package dimensons to-3 package ( unit:mm ) c-mount ( unit:mm )
03.08.2010 rlt635_ser ies_cmount_to3.doc 3 of 4 typical performance curves notes 1. the 635nm high power laser diode radiated high power red beam .don't look at the laser light directly, because it's harmful to eyes. 2. high-power semiconductor laser diodes are temperature-sensitive devices. the high temperature will effect the performance of the products. the lifetime can also be shortened by high temperature. so the generated heat must be removed in time when the ld working. the water cooling system or tec system are recommended for keeping the ld at a suitable temperature. 3. increase the current gradually to the specified operating value. for shutting down the laser diode, please decrease the current to zero gradually, and then turn off the power. pleaser sure that the power supply have no current overshoot at any time. high power laser diodes could operate in forward voltage. the reverse current and voltage should not be higher than 25 ma and 3 v, respectively. 4. be careful to keep the facet cleaning and prevent mechanical transmission. contamination of facet will result in rapid degradation of devices. the chip of ld is fragile. please do not use any hard thing to touch the chip. 5. the high power laser diode arrays are very s ensitive to electrostatic. please wear anti- static bracelet during operating with the laser diodes. 6. the operating temperature should be controlled at ?10c ? ~70c. a clean, dry and ventilated environment should be available when storing and operation. dew can damage the laser diodes. please check the model number of the laser diodes before you take it, and ensure the appearance test.
03.08.2010 rlt635_ser ies_cmount_to3.doc 4 of 4
|
